A Photodetector Based on p-Si/n-ZnO Nanotube Heterojunctions with High Ultraviolet Responsivity
Author:
Affiliation:
1. King Abdullah University of Science and Technology (KAUST), Physical Sciences and Engineering Division, Thuwal 23955-6900, Saudi Arabia
Funder
King Abdullah University of Science and Technology
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.7b09645
Reference68 articles.
1. Wide-bandgap semiconductor ultraviolet photodetectors
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4. ZnO Nanowire UV Photodetectors with High Internal Gain
5. Optimizing Performance of Silicon-Based p–n Junction Photodetectors by the Piezo-Phototronic Effect
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