Highly Mobile Two-Dimensional Electron Gases with a Strong Gating Effect at the Amorphous LaAlO3/KTaO3 Interface-Reference-Cited by-同舟云学术

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Highly Mobile Two-Dimensional Electron Gases with a Strong Gating Effect at the Amorphous LaAlO3/KTaO3 Interface

Published:2017-10-03 Issue:41 Volume:9 Page:36456-36461
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Zhang Hui¹²,Zhang Hongrui¹²,Yan Xi¹²,Zhang Xuejing¹²,Zhang Qinghua¹²,Zhang Jing¹²,Han Furong¹²,Gu Lin¹²^ORCID,Liu Banggui¹²^ORCID,Chen Yuansha¹²,Shen Baogen¹²,Sun Jirong¹²^ORCID

Affiliation:

1. Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, Peoples’ Republic of China

2. School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, Peoples’ Republic of China

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Chinese Academy of Sciences

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b12814

Reference41 articles.

1. A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface

2. Why some interfaces cannot be sharp

3. High Mobility inLaAlO3/SrTiO3Heterostructures: Origin, Dimensionality, and Perspectives

4. Effect of oxygen vacancies in theSrTiO3substrate on the electrical properties of theLaAlO3∕SrTiO3interface

5. Superconducting Interfaces Between Insulating Oxides

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