Enhancing the Photocatalytic Hydrogen Evolution Performance of a Metal/Semiconductor Catalyst through Modulation of the Schottky Barrier Height by Controlling the Orientation of the Interface-Reference-Cited by-同舟云学术

Enhancing the Photocatalytic Hydrogen Evolution Performance of a Metal/Semiconductor Catalyst through Modulation of the Schottky Barrier Height by Controlling the Orientation of the Interface

Published:2017-04-03 Issue:14 Volume:9 Page:12494-12500
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Liu Yang¹,Gu Xin¹,Qi Wen¹,Zhu Hong¹,Shan Hao¹,Chen Wenlong¹,Tao Peng¹,Song Chengyi¹,Shang Wen¹,Deng Tao¹,Wu Jianbo¹^ORCID

Affiliation:

1. State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering and ‡University of Michigan−Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240, P. R. China

Funder

Shanghai Jiao Tong University

National Natural Science Foundation of China

Shanghai Municipality

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b01428

Reference42 articles.

1. Hydrogen evolution from a copper(I) oxide photocathode coated with an amorphous molybdenum sulphide catalyst