Effect of Dielectric Interface on the Performance of MoS2 Transistors-Reference-Cited by-同舟云学术

Effect of Dielectric Interface on the Performance of MoS2 Transistors

Published:2017-12-14 Issue:51 Volume:9 Page:44602-44608
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Li Xuefei¹,Xiong Xiong¹,Li Tiaoyang¹,Li Sichao¹,Zhang Zhenfeng¹,Wu Yanqing¹^ORCID

Affiliation:

1. Wuhan National High Magnetic Field Center and School of Electrical and Electronic Engineering and ‡Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China

Funder

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b14031

Reference51 articles.

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3. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

4. Jongho, L.; Hsiao-Yu, C.; Tae-Jun, H.; Huifeng, L.; Ruoff, R. S.; Dodabalapur, A.; Akinwande, D.InHigh-Performance Flexible Nanoelectronics: 2D Atomic Channel Materials for Low-Power Digital and High-Frequency Analog Devices, 2013 IEEE International Electron Devices Meeting (IEDM), Dec 9–11, 2013; pp19.2.1–19.2.4.

5. The New Skinny in Two-Dimensional Nanomaterials

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