Few-Layer WSe2 Schottky Junction-Based Photovoltaic Devices through Site-Selective Dual Doping-Reference-Cited by-同舟云学术

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Few-Layer WSe2 Schottky Junction-Based Photovoltaic Devices through Site-Selective Dual Doping

Published:2017-12-04 Issue:49 Volume:9 Page:42912-42918
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Ko Seungpil¹,Na Junhong²^ORCID,Moon Young-Sun¹,Zschieschang Ute²,Acharya Rachana²,Klauk Hagen²,Kim Gyu-Tae¹,Burghard Marko²,Kern Klaus²³

Affiliation:

1. School of Electrical Engineering, Korea University, 136-701 Seoul, Republic of Korea

2. Max-Planck-Institute for Solid State Research, Heisenbergstrasse 1, D-70569 Stuttgart, Germany

3. Institut de Physique, École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b13395

Reference50 articles.

1. Present perspectives of broadband photodetectors based on nanobelts, nanoribbons, nanosheets and the emerging 2D materials

2. Two-dimensional material nanophotonics

3. Interlayer Transition and Infrared Photodetection in Atomically Thin Type-II MoTe2/MoS2 van der Waals Heterostructures

4. Novel Transfer Behaviors in 2D MoS2 /WSe2 Heterotransistor and Its Applications in Visible-Near Infrared Photodetection

5. Gate tunable WSe2–BP van der Waals heterojunction devices

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3. Self-driven high-performance broadband photodetector based on WSe2 nano-speckles;Materials Research Bulletin;2024-01

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