High-Performance Quantum Dot Thin-Film Transistors with Environmentally Benign Surface Functionalization and Robust Defect Passivation-Reference-Cited by-同舟云学术

High-Performance Quantum Dot Thin-Film Transistors with Environmentally Benign Surface Functionalization and Robust Defect Passivation

Published:2018-01-22 Issue:4 Volume:10 Page:3739-3749
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Jung Su Min,Kang Han Lim¹,Won Jong Kook,Kim JaeHyun,Hwang ChaHwan,Ahn KyungHan²^ORCID,Chung In²³^ORCID,Ju Byeong-Kwon¹,Kim Myung-Gil,Park Sung Kyu^ORCID

Affiliation:

1. School of Electrical and Electronic Engineering, Korea University, Seoul 02841, Republic of Korea

2. Center for Nanoparticle Research, Institute for Basic Science (IBS), Daejeon 34126, Republic of Korea

3. School of Chemical and Biological Engineering and Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic of Korea

Funder

National Research Foundation of Korea

Korea Institute of Energy Technology Evaluation and Planning

Korea Evaluation Institute of Industrial Technology

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b13997

Reference53 articles.

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4. Band-like transport, high electron mobility and high photoconductivity in all-inorganic nanocrystal arrays

5. Bandlike Transport in Strongly Coupled and Doped Quantum Dot Solids: A Route to High-Performance Thin-Film Electronics

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