Influence of Asymmetric Contact Form on Contact Resistance and Schottky Barrier, and Corresponding Applications of Diode-Reference-Cited by-同舟云学术

Influence of Asymmetric Contact Form on Contact Resistance and Schottky Barrier, and Corresponding Applications of Diode

Published:2017-05-23 Issue:22 Volume:9 Page:18945-18955
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Zhao Yudan¹²,Xiao Xiaoyang¹²,Huo Yujia¹²,Wang Yingcheng¹²,Zhang Tianfu¹²,Jiang Kaili¹²,Wang Jiaping¹²,Fan Shoushan¹²,Li Qunqing¹²^ORCID

Affiliation:

1. State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China

2. Collaborative Innovation Center of Quantum Matter, Beijing 100084, China

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b04076

Reference66 articles.

1. Carbon Nanotube Thin Films: Fabrication, Properties, and Applications

2. Three-Dimensional Flexible Complementary Metal–Oxide–Semiconductor Logic Circuits Based On Two-Layer Stacks of Single-Walled Carbon Nanotube Networks

3. Fabrication of All-Carbon Nanotube Electronic Devices on Flexible Substrates Through CVD and Transfer Methods

4. Rigid/Flexible Transparent Electronics Based on Separated Carbon Nanotube Thin-Film Transistors and Their Application in Display Electronics

5. Flexible high-performance carbon nanotube integrated circuits

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