Kelvin Probe Force Microscopy and Calculation of Charge Transport in a Graphene/Silicon Dioxide System at Different Relative Humidity-Reference-Cited by-同舟云学术

Kelvin Probe Force Microscopy and Calculation of Charge Transport in a Graphene/Silicon Dioxide System at Different Relative Humidity

Published:2018-03-20 Issue:14 Volume:10 Page:11987-11994
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Konečný Martin¹²,Bartošík Miroslav¹²³^ORCID,Mach Jindřich¹²,Švarc Vojtěch¹²,Nezval David¹²,Piastek Jakub¹²,Procházka Pavel¹²,Cahlík Aleš⁴,Šikola Tomáš¹²

Affiliation:

1. Central European Institute of Technology, Brno University of Technology (CEITEC BUT), Purkyňova 123, 612 00 Brno, Czech Republic

2. Institute of Physical Engineering, Brno University of Technology, Technická 2, 616 69 Brno, Czech Republic

3. Department of Physics and Materials Engineering, Faculty of Technology, Tomas Bata University in Zlín, Vavrečkova 275, 760 01 Zlín, Czech Republic

4. Department of Thin Films and Nanostructures, Institute of Physics, The Czech Academy of Sciences, Cukrovarnická 10/112, 162 00 Praha 6, Czech Republic

Funder

Grantov? Agentura Cesk? Republiky

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b18041

Reference54 articles.

1. Approaching ballistic transport in suspended graphene

2. Ultrahigh electron mobility in suspended graphene

3. The electronic properties of graphene