Inhomogeneous Carrier Transport at Contact/GaN Interfaces and Thermal Instability of Vertical Light-Emitting Diodes-Reference-Cited by-同舟云学术

Inhomogeneous Carrier Transport at Contact/GaN Interfaces and Thermal Instability of Vertical Light-Emitting Diodes

Published:2014-10-21 Issue:21 Volume:6 Page:18673-18682
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Choi Yunju¹²,Jung Eunjin¹,Kim Yangsoo²,Oh Sejong³,Yoo Myung-Cheol³,Kim Hyunsoo¹

Affiliation:

1. School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju, Chonbuk 561-756, Korea

2. Suncheon Center, Korea Basic Science Institute, Suncheon 540-742, Korea

3. R&D Center, Verticle Inc., Pyongtaek 459-040, Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am506257u

Reference62 articles.

1. Solid-State Light Sources Getting Smart

2. Prospects for LED lighting

3. LEDs for Solid-State Lighting: Performance Challenges and Recent Advances

4. III-Nitride Photonics

5. InGaN-based blue/green LEDs and laser diodes

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