Study of Growth Parameters for Single InAs QD Formation on GaAs(001) Patterned Substrates by Local Oxidation Lithography
Author:
Affiliation:
1. IMM-Instituto de Microelectrónica de Madrid (CNM-CSIC), Isaac Newton 8, PTM, E-28760 Tres Cantos, Madrid, Spain
Funder
Consejo Superior de Investigaciones Científicas
Ministerio de Economía y Competitividad
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/cg5013632
Reference34 articles.
1. Advanced quantum dot configurations
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