Parylene-Based Double-Layer Gate Dielectrics for Organic Field-Effect Transistors
Author:
Affiliation:
1. Pohang Accelerator Laboratory, 77 Cheongam-Ro, Nam-Gu, Pohang 37673, Republic of Korea
Funder
National Research Foundation of Korea
Ministry of Science, ICT and Future Planning
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.8b12663
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