Characterization of Cd-Free Zn1–xMgxO:Al/Zn1–xMgxO/Cu(In,Ga)(S,Se)2 Solar Cells Fabricated by an All Dry Process Using Ultraviolet Light Excited Time-Resolved Photoluminescence-Reference-Cited by-同舟云学术

Characterization of Cd-Free Zn1–xMgxO:Al/Zn1–xMgxO/Cu(In,Ga)(S,Se)2 Solar Cells Fabricated by an All Dry Process Using Ultraviolet Light Excited Time-Resolved Photoluminescence

Published:2019-01-29 Issue:7 Volume:11 Page:7539-7545
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Chantana Jakapan^ORCID,Kawano Yu,Nishimura Takahito,Kato Takuya¹,Sugimoto Hiroki¹,Minemoto Takashi

Affiliation:

1. Atsugi Research Center, Solar Frontier K. K., Atsugi, Kanagawa 243-0206, Japan

Funder

New Energy and Industrial Technology Development Organization

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.8b19344

Reference32 articles.

1. Potassium-induced surface modification of Cu(In,Ga)Se2 thin films for high-efficiency solar cells

2. Effects of heavy alkali elements in Cu(In,Ga)Se 2 solar cells with efficiencies up to 22.6%

3. Properties of Cu(In,Ga)Se2 solar cells with new record efficiencies up to 21.7%

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