Visible Light-Erasable Oxide FET-Based Nonvolatile Memory Operated with a Deep Trap Interface-Reference-Cited by-同舟云学术

Visible Light-Erasable Oxide FET-Based Nonvolatile Memory Operated with a Deep Trap Interface

Published:2018-07-12 Issue:31 Volume:10 Page:26405-26412
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kim Taeyoon¹²,Lim Jung Wook¹²^ORCID,Lee Seong Hyun¹,Na Jeho¹,Jeong Jiwoon¹,Jung Kwang Hoon¹²,Kim Gayoung¹²,Yun Sun Jin¹²^ORCID

Affiliation:

1. ICT Materials Research Group, Materials & Components Basic Research Division, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeong-ro, Yuseong-gu, Daejeon 305-700, South Korea

2. Department of Advanced Device Engineering, University of Science and Technology, 217 Gajeong-ro, Yuseong-gu, Daejeon 305-350, South Korea

Funder

Ministry of Science, ICT and Future Planning

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.8b07749

Reference41 articles.

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4. Fully transparent nonvolatile memory employing amorphous oxides as charge trap and transistor’s channel layer

5. Transparent indium gallium zinc oxide transistor based floating gate memory with platinum nanoparticles in the gate dielectric

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