20% Efficient Zn0.9Mg0.1O:Al/Zn0.8Mg0.2O/Cu(In,Ga)(S,Se)2 Solar Cell Prepared by All-Dry Process through a Combination of Heat-Light-Soaking and Light-Soaking Processes-Reference-Cited by-同舟云学术

20% Efficient Zn0.9Mg0.1O:Al/Zn0.8Mg0.2O/Cu(In,Ga)(S,Se)2 Solar Cell Prepared by All-Dry Process through a Combination of Heat-Light-Soaking and Light-Soaking Processes

Published:2018-03-13 Issue:13 Volume:10 Page:11361-11368
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Chantana Jakapan¹^ORCID,Kato Takuya²,Sugimoto Hiroki²,Minemoto Takashi¹

Affiliation:

1. Department of Electrical and Electronic Engineering, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577, Japan

2. Atsugi Research Center, Solar Frontier K. K., Atsugi, Kanagawa 243-0206, Japan

Funder

New Energy and Industrial Technology Development Organization

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.8b01247

Reference37 articles.

1. Effects of heavy alkali elements in Cu(In,Ga)Se 2 solar cells with efficiencies up to 22.6%

2. Potassium-induced surface modification of Cu(In,Ga)Se2 thin films for high-efficiency solar cells

3. Kamada, R.; Yagioka, T.; Adachi, S.; Handa, A.; Tai, K. F.; Kato, T.; Sugimoto, H. New world record Cu(In,Ga)(Se,S)2 thin film solar cell efficiency beyond 22%. Conference Record of the 43rd IEEE Photovoltaic Specialists Conference, 2016; pp 1287–1291.

4. Thin-film Cu(In,Ga)(Se,S)2 -based solar cell with (Cd,Zn)S buffer layer and Zn1−x Mg x O window layer

5. Evaluation of junction quality of buffer-free Zn(O,S):Al/Cu(In,Ga)Se2thin-film solar cells

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