Field-Effect Transistors Based on Networks of Highly Aligned, Chemically Synthesized N = 7 Armchair Graphene Nanoribbons-Reference-Cited by-同舟云学术

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Field-Effect Transistors Based on Networks of Highly Aligned, Chemically Synthesized N = 7 Armchair Graphene Nanoribbons

Published:2018-03-08 Issue:12 Volume:10 Page:9900-9903
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Passi Vikram¹,Gahoi Amit²,Senkovskiy Boris V.³^ORCID,Haberer Danny⁴,Fischer Felix R.⁴^ORCID,Grüneis Alexander³^ORCID,Lemme Max C.¹²^ORCID

Affiliation:

1. AMO GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Strasse 25, Aachen, Germany

2. Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Strasse 2, Aachen, Germany

3. II. Physikalisches Institut, Universität zu Köln, Zülpicher Strasse 77, Köln, Germany

4. Department of Chemistry, University of California Berkeley, Berkeley, California 94720, United States

Funder

European Regional Development Fund

Basic Energy Sciences

Deutsche Forschungsgemeinschaft

FP7 Ideas: European Research Council

H2020 European Research Council

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

http://pubs.acs.org/doi/pdf/10.1021/acsami.8b01116

Reference33 articles.

1. Edge state in graphene ribbons: Nanometer size effect and edge shape dependence

2. Simulation of Graphene Nanoribbon Field-Effect Transistors

3. Energy Gaps in Graphene Nanoribbons

4. Electronic Structure and Stability of Semiconducting Graphene Nanoribbons

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