Achieving 14.4% Alcohol-Based Solution-Processed Cu(In,Ga)(S,Se)2 Thin Film Solar Cell through Interface Engineering-Reference-Cited by-同舟云学术

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Achieving 14.4% Alcohol-Based Solution-Processed Cu(In,Ga)(S,Se)2 Thin Film Solar Cell through Interface Engineering

Published:2018-03-12 Issue:12 Volume:10 Page:9894-9899
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Park Gi Soon¹²,Chu Van Ben¹,Kim Byoung Woo¹,Kim Dong-Wook³^ORCID,Oh Hyung-Suk¹,Hwang Yun Jeong¹^ORCID,Min Byoung Koun¹²^ORCID

Affiliation:

1. Clean Energy Research Center, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea

2. Green School, Korea University, Seoul 02841, Republic of Korea

3. Department of Physics, Ewha Womans University, Seoul 03760, Republic of Korea

Funder

Korea Institute of Energy Technology Evaluation and Planning

Ministry of Science, ICT and Future Planning

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.8b00526

Reference22 articles.

1. Molecular-ink route to 13.0% efficient low-bandgap CuIn(S,Se)2 and 14.7% efficient Cu(In,Ga)(S,Se)2 solar cells

2. Solution-processed Cu(In,Ga)(S,Se)2absorber yielding a 15.2% efficient solar cell

3. High efficiency solution-processed thin-film Cu(In,Ga)(Se,S)2solar cells

4. Electrical activity at grain boundaries ofCu(In,Ga)Se2thin films

5. Modeling the Effects of Na Incorporation on CIGS Solar Cells

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