Contact Resistance in Ambipolar Organic Field-Effect Transistors Measured by Confocal Photoluminescence Electro-Modulation Microscopy
Author:
Affiliation:
1. CNR-ISMN, Bologna Via P. Gobetti 101, 40129 Bologna, Italy
2. Institute of Physics & Astronomy, Universität Potsdam, Karl-Liebknecht-Straße 24-25, 14476 Potsdam, Germany
3. CNR-ISOF, Bologna Via P. Gobetti 101, 40129 Bologna, Italy
Funder
H2020 LEIT Information and Communication Technologies
H2020 European Research Council
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
http://pubs.acs.org/doi/pdf/10.1021/acsami.8b05518
Reference39 articles.
1. A bright future for organic field-effect transistors
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