Electrophoretically Deposited MoSe2/WSe2 Heterojunction from Ultrasonically Exfoliated Nanocrystals for Enhanced Electrochemical Photoresponse-Reference-Cited by-同舟云学术

Electrophoretically Deposited MoSe2/WSe2 Heterojunction from Ultrasonically Exfoliated Nanocrystals for Enhanced Electrochemical Photoresponse

Published:2019-01-03 Issue:4 Volume:11 Page:4093-4102
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Patel Alkesh B.^ORCID,Machhi Hiren K.^ORCID,Chauhan Payal,Narayan Som¹,Dixit Vijay,Soni Saurabh S.^ORCID,Jha Prafulla K.¹,Solanki Gunvant K.,Patel Kireetkumar D.,Pathak Vivek M.

Affiliation:

1. Department of Physics, The M. S. University of Baroda, Vadodara 390002, Gujarat, India

Funder

Department of Science and Technology, Ministry of Science and Technology

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.8b18177

Reference53 articles.

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2. Recent Advances in Electronic and Optoelectronic Devices Based on Two-Dimensional Transition Metal Dichalcogenides

3. Two-dimensional hybrid nanosheets of few layered MoSe2 on reduced graphene oxide as anodes for long-cycle-life lithium-ion batteries

4. Broadband photoresponse and rectification of novel graphene oxide/n-Si heterojunctions

5. 2D transition metal dichalcogenides

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