Effects of High-Energy Electron Irradiation on Quantum Emitters in Hexagonal Boron Nitride-Reference-Cited by-同舟云学术

Effects of High-Energy Electron Irradiation on Quantum Emitters in Hexagonal Boron Nitride

Published:2018-06-08 Issue:29 Volume:10 Page:24886-24891
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Ngoc My Duong Hanh¹,Nguyen Minh Anh Phan¹,Kianinia Mehran¹,Ohshima Takeshi²^ORCID,Abe Hiroshi²,Watanabe Kenji³,Taniguchi Takashi³,Edgar James H.⁴,Aharonovich Igor¹^ORCID,Toth Milos¹^ORCID

Affiliation:

1. School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia

2. National Institutes for Quantum and Radiological Science and Technology, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan

3. National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 Japan

4. Department of Chemical Engineering, Durland Hall, Kansas State University, Manhattan, Kansas 66506, United States

Funder

Ministry of Education, Culture, Sports, Science and Technology

Air Force Office of Scientific Research

Australian Research Council

Japan Society for the Promotion of Science

Office of Naval Research Global

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.8b07506

Reference35 articles.

1. Solid-state single-photon emitters

2. Material platforms for spin-based photonic quantum technologies

3. Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide

4. A silicon carbide room-temperature single-photon source

5. Bright Room‐Temperature Single‐Photon Emission from Defects in Gallium Nitride

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