Wet Pretreatment-Induced Modification of Cu(In,Ga)Se2/Cd-Free ZnTiO Buffer Interface-Reference-Cited by-同舟云学术

Wet Pretreatment-Induced Modification of Cu(In,Ga)Se2/Cd-Free ZnTiO Buffer Interface

Published:2018-05-28 Issue:24 Volume:10 Page:20920-20928
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Hwang Suhwan¹,Larina Liudmila¹,Lee Hojin¹,Kim Suncheul¹,Choi Kyoung Soon²,Jeon Cheolho²,Ahn Byung Tae¹,Shin Byungha¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea

2. Advanced Nano Surface Research Group, Korea Basic Science Institute (KBSI), Daejeon 34141, Republic of Korea

Funder

National Research Foundation of Korea

Korea Institute of Energy Technology Evaluation and Planning

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.8b01090

Reference36 articles.

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4. Hunger, R.; Schulmeyer, T.; Lebedev, M.; Klein, A.; Jaegermann, W.; Kniese, R.; Powalla, M.; Sakurai, K.; Niki, S. In Removal of the Surface Inversion of CuInSe2/Absorbers by NH3, aq./etching, Photovoltaic Energy Conversion. Proceedings of 3rd World Conference; IEEE, 2003; pp 566–569.

5. Effects of solution-grown CdS on Cu(InGa)Se2 grain boundaries

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