Defect-Induced Exchange Bias in a Single SrRuO3 Layer-Reference-Cited by-同舟云学术

Defect-Induced Exchange Bias in a Single SrRuO3 Layer

Published:2018-07-23 Issue:32 Volume:10 Page:27472-27476
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Wang Changan¹²³^ORCID,Chen Chao,Chang Ching-Hao⁴^ORCID,Tsai Hsu-Sheng¹,Pandey Parul¹,Xu Chi¹,Böttger Roman¹,Chen Deyang,Zeng Yu-Jia³^ORCID,Gao Xingsen^ORCID,Helm Manfred¹²,Zhou Shengqiang¹

Affiliation:

1. Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden, Germany

2. Technische Universität Dresden, D-01062 Dresden, Germany

3. Shenzhen Key Laboratory of Laser Engineering, College of Optoelectronic Engineering, Shenzhen University, 518060 Shenzhen, China

4. Leibniz-Institute for Solid State and Materials Research, Helmholtzstrasse 20, 01069 Dresden, Germany

Funder

Deutsche Forschungsgemeinschaft

China Scholarship Council

National Natural Science Foundation of China

Ministry of Science and Technology, Taiwan

Shenzhen Municipality

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.8b07918

Reference39 articles.

1. Exchange bias

2. Exchange Coupling in Ferromagnet/Antiferromagnet Bilayers with ComparableTCandTN

3. The Magnetic Stability of Spin-Dependent Tunneling Devices

4. Exchange bias in nanostructures

5. Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited)

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