Field-Effect Charge Transport in Doped Polymer Semiconductor–Insulator Alternating Bulk Junctions with Ultrathin Transport Layers-Reference-Cited by-同舟云学术

Field-Effect Charge Transport in Doped Polymer Semiconductor–Insulator Alternating Bulk Junctions with Ultrathin Transport Layers

Published:2018-10-23 Issue:45 Volume:10 Page:39091-39099
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Hu Yupeng¹,Bu Laju¹,Wang Xudong¹,Zhou Ling¹,Lu Guanghao¹^ORCID

Affiliation:

1. State Key Laboratory of Electrical Insulation and Power Equipment, and Frontier Institute of Science and Technology, Xi’an Jiaotong University, Xi’an 710049, China

Funder

China Postdoctoral Science Foundation

National Natural Science Foundation of China

Central Committee of the Communist Party of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.8b13601

Reference44 articles.

1. Approaching disorder-free transport in high-mobility conjugated polymers

2. Alkylated Selenophene-Based Ladder-Type Monomers via a Facile Route for High-Performance Thin-Film Transistor Applications

3. Intrinsically stretchable and healable semiconducting polymer for organic transistors

4. Surface Modification of CdSe Quantum-Dot Floating Gates for Advancing Light-Erasable Organic Field-Effect Transistor Memories

5. 25th Anniversary Article: Organic Field-Effect Transistors: The Path Beyond Amorphous Silicon

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