Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures
Author:
Affiliation:
1. Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States
2. National Institute for Materials Science, 1-1 Namiki Tsukuba, Ibaraki 305-0044, Japan
Funder
Office of Naval Research
Semiconductor Research Corporation
Intel Corporation
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/nl503756y
Reference27 articles.
1. Boron nitride substrates for high-quality graphene electronics
2. Van der Waals heterostructures
3. Coulomb drag and magnetotransport in graphene double layers
4. Strong Coulomb drag and broken symmetry in double-layer graphene
5. Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures
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