Refractory Vertically Aligned Carbon Nanotube–Boron Nitride Nanocomposites for Scalable Electrical Anisotropic Interconnects-Reference-Cited by-同舟云学术

Refractory Vertically Aligned Carbon Nanotube–Boron Nitride Nanocomposites for Scalable Electrical Anisotropic Interconnects

Published:2019-01-04 Issue:1 Volume:2 Page:100-108
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Zou Qi Ming¹^ORCID,Deng Lei Min¹²,Fan Pei Xun¹,Li Da Wei¹^ORCID,Zhang Chen Fei¹,Fan Li Sha¹,Jiang Lan³^ORCID,Silvain Jean-Francois⁴,Lu Yong Feng¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, University of Nebraska—Lincoln, Lincoln, Nebraska 68588-0511, United States

2. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China

3. School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081, China

4. Institut de Chimie de la Matière Condensée de Bordeaux, Avenue du Docteur Albert Schweitzer, Cedex F-33608 Pessac, France

Funder

Nebraska Center for Energy Sciences Research, University of Nebraska-Lincoln

U.S. Department of Energy

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.8b01727

Reference63 articles.

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2. Interconnect scaling-the real limiter to high performance ULSI

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4. https://www.ncabgroup.com/hdi-pcb/.

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