Self-Limiting Growth of High-Quality 2D Monolayer MoS2 by Direct Sulfurization Using Precursor-Soluble Substrates for Advanced Field-Effect Transistors and Photodetectors
Author:
Affiliation:
1. Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
Funder
H2020 European Research Council
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsanm.8b01955
Reference51 articles.
1. Van der Waals heterostructures
2. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
3. Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene
4. Emerging Photoluminescence in Monolayer MoS2
5. Atomically ThinMoS2: A New Direct-Gap Semiconductor
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