Wafer Scale Growth and Characterization of Edge Specific Graphene Nanoribbons for Nanoelectronics-Reference-Cited by-同舟云学术

Wafer Scale Growth and Characterization of Edge Specific Graphene Nanoribbons for Nanoelectronics

Published:2018-12-21 Issue:1 Volume:2 Page:156-162
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Zakharov Alexei A.¹^ORCID,Vinogradov Nikolay A.¹^ORCID,Aprojanz Johannes²,Nguyen Thi Thuy Nhung²,Tegenkamp Christoph³²^ORCID,Struzzi Claudia¹,Iakimov Tihomir⁴,Yakimova Rositsa⁴,Jokubavicius Valdas⁴

Affiliation:

1. MAXIV Laboratory, Lund University, Fotongatan 2, 22484 Lund, Sweden

2. Institut für Physik, Technische Universität Chemnitz, Reichenhainer Straße 70, 09126, Chemnitz, Germany

3. Institut für Festkörperphysik, Leibniz Universität Hannover, Appelstraße 2, D-030167 Hannover, Germany

4. IFM, Linköping University, SE-58183 Linköping, Sweden

Funder

Vetenskapsr?det

Deutsche Forschungsgemeinschaft

Stiftelsen f?r?Strategisk Forskning

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.8b01780

Reference31 articles.

1. Scalable templated growth of graphene nanoribbons on SiC

2. Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide

3. Edge-states in graphene nanoribbons: a combined spectroscopy and transport study

4. Exceptional ballistic transport in epitaxial graphene nanoribbons

5. Atomic Structure of Epitaxial Graphene Sidewall Nanoribbons: Flat Graphene, Miniribbons, and the Confinement Gap

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