Observation of Ultrathin Precursor Film Formation during Ge–Si Liquid-Phase Epitaxy from an Undersaturated Solution-Reference-Cited by-同舟云学术

Observation of Ultrathin Precursor Film Formation during Ge–Si Liquid-Phase Epitaxy from an Undersaturated Solution

Published:2017-01-09 Issue:3 Volume:33 Page:814-819
ISSN:0743-7463
Container-title:Langmuir
language:en
Short-container-title:Langmuir

Author:

Vonk Vedran¹²^ORCID,Pontoni Diego³,Cremers Melissa¹,Kerkenaar Anne¹,Bode Arno A. C.¹,Szweryn Wiesiek¹,Nowak Gregor²,de Jong Aryan E. F.³,Dosch Helmut²,Vlieg Elias¹^ORCID

Affiliation:

1. Institute for Molecules and Materials, Radboud University Nijmegen, Nijmegen 6525AJ, The Netherlands

2. Deutsches Elektronen-Synchrotron (DESY), Hamburg 22607, Germany

3. European Synchrotron Radiation Facility, Grenoble 38000, France

Funder

Nederlandse Organisatie voor Wetenschappelijk Onderzoek

Publisher

American Chemical Society (ACS)

Subject

Electrochemistry,Spectroscopy,Surfaces and Interfaces,Condensed Matter Physics,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.langmuir.6b03984

Reference40 articles.

1. Observation of Surface Melting

2. Quantized Layer Growth at Liquid-Crystal Surfaces

3. Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials

4. Understanding crystal growth in vacuum and beyond

5. Surface Degradation during Separation of Crystals from Solution: Minimizing the Shut-off Effect

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