Tailoring Wettability Properties of GaN Epitaxial Layers through Surface Porosity Induced during CVD Deposition-Reference-Cited by-同舟云学术

Tailoring Wettability Properties of GaN Epitaxial Layers through Surface Porosity Induced during CVD Deposition

Published:2021-12-10 Issue:50 Volume:37 Page:14622-14627
ISSN:0743-7463
Container-title:Langmuir
language:en
Short-container-title:Langmuir

Author:

Mena Josué¹²^ORCID,Carvajal Joan J.¹^ORCID,Zubialevich Vitaly³^ORCID,Parbrook Peter J.³⁴,Díaz Francesc¹,Aguiló Magdalena¹

Affiliation:

1. Física i Cristal·lografia de Materials i Nanomaterials (FiCMA-FiCNA) and EMaS, Departament Química Física i Inorgànica, Universitat Rovira i Virgili (URV), Tarragona 43007, Spain

2. Department of Physics, Umeå University, Umeå SE-90187, Sweden

3. Tyndall National Institute, Lee Maltings, Cork T12 R5CP, Ireland

4. School of Engineering, University College Cork, Cork T12 R5CP, Ireland

Funder

Generalitat de Catalunya

Publisher

American Chemical Society (ACS)

Subject

Electrochemistry,Spectroscopy,Surfaces and Interfaces,Condensed Matter Physics,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.langmuir.1c02316

Reference26 articles.

1. A Survey of Wide Bandgap Power Semiconductor Devices

2. Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications

3. Fabrication of full-color GaN-based light-emitting diodes on nearly lattice-matched flexible metal foils

4. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

5. Gas sensitive GaN/AlGaN-heterostructures

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