Nitride Surface Passivation of GaAs Nanowires: Impact on Surface State Density-Reference-Cited by-同舟云学术

Nitride Surface Passivation of GaAs Nanowires: Impact on Surface State Density

Published:2014-12-04 Issue:1 Volume:15 Page:63-68
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Alekseev Prokhor A.¹,Dunaevskiy Mikhail S.¹²,Ulin Vladimir P.¹,Lvova Tatiana V.¹,Filatov Dmitriy O.³,Nezhdanov Alexey V.³,Mashin Aleksander I.³,Berkovits Vladimir L.¹

Affiliation:

1. Ioffe Institute, Saint-Petersburg 194021, Russia

2. National Research University of Information Technologies, Mechanics, and Optics (ITMO), Saint-Petersburg 197101, Russia

3. Lobachevsky State University of Nizhni Novgorod, Nizhni Novgorod 603950, Russia

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl502909k

Reference38 articles.

1. Growth of nanowire superlattice structures for nanoscale photonics and electronics

2. Single-nanowire solar cells beyond the Shockley–Queisser limit

3. GaAs Nanowire Array Solar Cells with Axial p–i–n Junctions

4. Single GaAs/GaAsP Coaxial Core−Shell Nanowire Lasers

5. GaAs/AlGaAs Nanowire Photodetector

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