A Study of Reversible γ-Induced Structural Transformations in Vitreous Ge23.5Sb11.8S64.7 by High-Resolution X-ray Photoelectron Spectroscopy-Reference-Cited by-同舟云学术

A Study of Reversible γ-Induced Structural Transformations in Vitreous Ge23.5Sb11.8S64.7 by High-Resolution X-ray Photoelectron Spectroscopy

Published:2006-10-12 Issue:45 Volume:110 Page:22930-22934
ISSN:1520-6106
Container-title:The Journal of Physical Chemistry B
language:en
Short-container-title:J. Phys. Chem. B

Author:

Kovalskiy Andriy¹,Jain Himanshu¹,Miller Alfred C.¹,Golovchak Roman Ya.¹,Shpotyuk Oleh I.¹

Affiliation:

1. Department of Materials Science and Engineering, Lehigh University, 5 East Packer Avenue, Bethlehem, Pennsylvania 18015-3195, Lviv Scientific Research Institute of Materials of SRC “Carat”, 202 Stryjska str., Lviv, UA-79031, Ukraine, and Institute of Physics of Jan Dlugosz University, 13/15, al. Armii Krajowej, Czestochowa, PL-42201, Poland

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Surfaces, Coatings and Films,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/jp062900t

Reference30 articles.

1. Shpotyuk, O. Radiation-induced effects in chalcogenide vitreous semiconductors.Semiconducting Chalcogenide Glass 1:Glass Formation,Structure,and Simulated Transformations in Chalcogenide Glassess; Fairman, R., Ushkov, B., Eds.; Elsevier Academic Press: New York, 2004; pp 215−260.

2. Radiation-stimulated processes in vitreous arsenic trisulphide

3. Comparison of photo- and deuteron-induced effects in amorphous chalcogenide layers

4. Study of gamma-radiation-induced optical effects in Ge–Se–Cd for possible industrial dosimetric applications

5. Sensors of high-energy radiation based on amorphous chalcogenides

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