Quantification of Valleys of Randomly Textured Substrates as a Function of Opening Angle: Correlation to the Defect Density in Intrinsic nc-Si:H-Reference-Cited by-同舟云学术

Quantification of Valleys of Randomly Textured Substrates as a Function of Opening Angle: Correlation to the Defect Density in Intrinsic nc-Si:H

Published:2016-08-05 Issue:32 Volume:8 Page:20660-20666
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kim Do Yun¹,Hänni Simon²,Schüttauf Jan-Willem²,van Swaaij René A. C. M. M.¹,Zeman Miro¹

Affiliation:

1. Photovoltaic Materials and Devices, Delft University of Technology, 2600 GA Delft, the Netherlands

2. Photovoltaics and Thin Film Electronics Laboratory, Ecole Polytechnique Fédérale de Lausanne (EPFL), Rue de la Maladière 71b, CH-2000 Neuchâtel, Switzerland

Funder

Seventh Framework Programme

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.6b03995

Reference45 articles.

1. Thin-Film Silicon Triple-Junction Solar Cells on Highly Transparent Front Electrodes With Stabilized Efficiencies up to 12.8%

2. Quadruple-junction thin-film silicon-based solar cells with high open-circuit voltage

3. Characterization and simulation of a-Si:H/μc-Si:H tandem solar cells

4. Tandem solar cells deposited using hot-wire chemical vapor deposition

5. Basic efficiency limits, recent experimental results and novel light-trapping schemes in a-Si:H, μc-Si:H and `micromorph tandem' solar cells

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