Superacid Passivation of Crystalline Silicon Surfaces-Reference-Cited by-同舟云学术

Superacid Passivation of Crystalline Silicon Surfaces

Published:2016-08-31 Issue:36 Volume:8 Page:24205-24211
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Bullock James¹²³,Kiriya Daisuke¹²,Grant Nicholas³,Azcatl Angelica⁴,Hettick Mark¹²,Kho Teng³,Phang Pheng³,Sio Hang C.³,Yan Di³,Macdonald Daniel³,Quevedo-Lopez Manuel A.⁴,Wallace Robert M.⁴,Cuevas Andres³,Javey Ali¹²

Affiliation:

1. Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States

2. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States

3. Research School of Engineering, The Australian National University (ANU), Canberra, Australian Capital Territory 2602, Australia

4. Department of Materials Science and Engineering, University of Texas, Dallas, Richardson, Texas 75080, United States

Funder

Basic Energy Sciences

Australian Renewable Energy Agency

Bay Area Photovoltaic Consortium

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.6b07822

Reference46 articles.

1. Cuevas, A.; Allen, T.; Bullock, J.; Wan, Y.; Zhang, X.Skin Care for Healthy Silicon Solar Cells. In42nd IEEE Photovoltaic Specialist Conference (PVSC); June 14–19, 2015, New Orleans, LA; pp1–6.

2. Schroder, D. K.Semiconductor Material and Device Characterization,3rd ed.John Wiley & Sons:Hoboken, NJ, 2006; pp389–465.

3. High-eficiency silicon solar cells: Si/SiO2, interface parameters and their impact on device performance

4. Very low bulk and surface recombination in oxidized silicon wafers

5. Record low surface recombination velocities on 1 Ω cm p‐silicon using remote plasma silicon nitride passivation

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