Enhancing Carrier Mobilities in Organic Thin-Film Transistors Through Morphological Changes at the Semiconductor/Dielectric Interface Using Supercritical Carbon Dioxide Processing-Reference-Cited by-同舟云学术

Enhancing Carrier Mobilities in Organic Thin-Film Transistors Through Morphological Changes at the Semiconductor/Dielectric Interface Using Supercritical Carbon Dioxide Processing

Published:2016-11-03 Issue:45 Volume:8 Page:31144-31153
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Dong Ban Xuan,Amonoo Jojo A.,Purdum Geoffrey E.¹,Loo Yueh-Lin¹,Green Peter F.

Affiliation:

1. Department of Chemical and Biological Engineering, Princeton University, Princeton, New Jersey 08544, United States

Funder

University of Michigan

Air Force Office of Scientific Research

Vietnam Education Foundation

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.6b08248

Reference64 articles.

1. Flexible organic transistors and circuits with extreme bending stability

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3. Small Bandgap Polymers for Organic Solar Cells(Polymer Material Development in the Last 5 Years)

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