Low-Temperature Photochemically Activated Amorphous Indium-Gallium-Zinc Oxide for Highly Stable Room-Temperature Gas Sensors
Author:
Affiliation:
1. Department of Physics, Faculty of Science and Technology, Thammasat University, Pathum Thani, Thailand
2. School of Electrical and Electronic Engineering, Chung-Ang University, Seoul, Korea
Funder
National Research Foundation of Korea
Ministry of Trade, Industry and Energy
Ministry of Science, ICT and Future Planning
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.6b05724
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