Perpendicular Orientation Control without Interfacial Treatment of RAFT-Synthesized High-χ Block Copolymer Thin Films with Sub-10 nm Features Prepared via Thermal Annealing-Reference-Cited by-同舟云学术

Perpendicular Orientation Control without Interfacial Treatment of RAFT-Synthesized High-χ Block Copolymer Thin Films with Sub-10 nm Features Prepared via Thermal Annealing

Published:2017-03-17 Issue:37 Volume:9 Page:31266-31278
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Nakatani Ryuichi¹,Takano Hiroki¹,Chandra Alvin¹,Yoshimura Yasunari¹,Wang Lei¹,Suzuki Yoshinori¹,Tanaka Yuki¹,Maeda Rina¹,Kihara Naoko²,Minegishi Shinya²,Miyagi Ken²,Kasahara Yuusuke²,Sato Hironobu²,Seino Yuriko²,Azuma Tsukasa²,Yokoyama Hideaki³,Ober Christopher K.⁴^ORCID,Hayakawa Teruaki¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, School of Materials and Chemical Technology, Tokyo Institute of Technology, 2-12-1-S8-36 Ookayama, Meguro-ku, Tokyo 152-8552, Japan

2. DSA Research Department, EUVL Infrastructure Development Center, Inc., 16-1 Onogawa, Tsukuba-shi, Ibaraki 305-8569, Japan

3. Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan

4. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853-1501, United States

Funder

New Energy and Industrial Technology Development Organization

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.6b16129

Reference70 articles.

1. International Technology Roadmap for Semiconductors,www.itrs.net.

2. Density Multiplication and Improved Lithography by Directed Block Copolymer Assembly