Atomic Layer Etching Mechanism of MoS2 for Nanodevices-Reference-Cited by-同舟云学术

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Atomic Layer Etching Mechanism of MoS2 for Nanodevices

Published:2017-03-27 Issue:13 Volume:9 Page:11967-11976
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kim Ki Seok,Kim Ki Hyun,Nam Yeonsig,Jeon Jaeho,Yim Soonmin¹,Singh Eric²,Lee Jin Yong^ORCID,Lee Sung Joo^ORCID,Jung Yeon Sik¹^ORCID,Yeom Geun Young^ORCID,Kim Dong Woo

Affiliation:

1. School of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Republic of Korea

2. Department of Computer Science, Stanford University, Stanford, California 94305, United States

Funder

National Research Foundation of Korea

Ministry of Education, Science and Technology

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.6b15886

Reference37 articles.

1. Optoelectronic devices based on electrically tunable p–n diodes in a monolayer dichalcogenide

2. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

3. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

4. Van der Waals heterostructures

5. Anomalous Lattice Vibrations of Single- and Few-Layer MoS2

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