Magnetoresistance Behavior of Conducting Filaments in Resistive-Switching NiO with Different Resistance States-Reference-Cited by-同舟云学术

Magnetoresistance Behavior of Conducting Filaments in Resistive-Switching NiO with Different Resistance States

Published:2017-03-16 Issue:12 Volume:9 Page:10835-10846
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Zhao Diyang¹²,Qiao Shuang¹²,Luo Yuxiang¹³,Chen Aitian¹²^ORCID,Zhang Pengfei¹²,Zheng Ping⁴,Sun Zhong¹²,Guo Minghua¹²,Chiang Fu-kuo⁴,Wu Jian¹²,Luo Jianlin⁴²,Li Jianqi⁴²,Kokado Satoshi⁵,Wang Yayu¹²,Zhao Yonggang¹²^ORCID

Affiliation:

1. Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China

2. Collaborative Innovation Center of Quantum Matter, Beijing 100084, China

3. Shandong Institute of Aerospace Electronics Technology, Yantai 264670, China

4. Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190, China

5. Department of Electronics and Materials Science, Graduate School of Integrated Science and Technology, Shizuoka University, Hamamatsu 432-8561, Japan

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.6b16458

Reference69 articles.

1. Nanoionics-based resistive switching memories

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3. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

4. Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

5. Emerging memories: resistive switching mechanisms and current status

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