Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application-Reference-Cited by-同舟云学术

Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application

Published:2016-09-27 Issue:40 Volume:8 Page:26924-26931
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kim Hyo Yeon¹²,Jung Eun Ae¹³,Mun Geumbi⁴,Agbenyeke Raphael E.¹⁵,Park Bo Keun¹⁵,Park Jin-Seong²,Son Seung Uk³,Jeon Dong Ju¹,Park Sang-Hee Ko⁴,Chung Taek-Mo¹⁵,Han Jeong Hwan¹⁵

Affiliation:

1. Division of Advanced Materials, Korea Research Institute of Chemical Technology(KRICT), 141 Gajeong-Ro, Yuseong-Gu, Deajeon 34114, Republic of Korea

2. Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-Ro, Seoul 04763, Republic of Korea

3. Department of Chemistry, Sungkyunkwan University, Suwon 16419, Republic of Korea

4. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea

5. Department of Chemical Convergence Materials, University of Science and Technology (UST), 217 Gajeong-Ro, Yuseong-Gu, Deajeon 34113, Republic of Korea

Funder

Ministry of Science, ICT and Future Planning

National Research Council of Science and Technology

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.6b07332

Reference29 articles.

1. High-mobility self-aligned top-gate oxide TFT for high-resolution AM-OLED

2. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices