Analysis of Schottky Contact Formation in Coplanar Au/ZnO/Al Nanogap Radio Frequency Diodes Processed from Solution at Low Temperature
Author:
Affiliation:
1. Department of Physics and Centre for Plastic Electronics Blackett Laboratory, Imperial College London, London SW7 2AZ, United Kingdom
Funder
Engineering and Physical Sciences Research Council
European Research Council
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.6b07099
Reference59 articles.
1. Sol-Gel-Based Highly Sensitive Pd/n-ZnO Thin Film/n-Si Schottky Ultraviolet Photodiodes
2. Dependence of photocurrent on UV wavelength in ZnO/Pt bottom-contact Schottky diode
3. Ultraporous Electron-Depleted ZnO Nanoparticle Networks for Highly Sensitive Portable Visible-Blind UV Photodetectors
4. ZnO nanowire lasers
5. High-Performance ZnO Transistors Processed Via an Aqueous Carbon-Free Metal Oxide Precursor Route at Temperatures Between 80-180 °C
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