Pronounced Surface Band Bending of Thin-Film Silicon Revealed by Modeling Core Levels Probed with Hard X-rays-Reference-Cited by-同舟云学术

Pronounced Surface Band Bending of Thin-Film Silicon Revealed by Modeling Core Levels Probed with Hard X-rays

Published:2016-06-29 Issue:27 Volume:8 Page:17685-17693
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Wippler David,Wilks Regan G.¹²,Pieters Bart E.,van Albada Sacha J.,Gerlach Dominic¹³,Hüpkes Jürgen,Bär Marcus¹²⁴,Rau Uwe

Affiliation:

1. Renewable Energy, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, D-14109 Berlin, Germany

2. Energy Materials In-Situ Laboratory Berlin, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Albert-Einstein-Str. 15, D-12489 Berlin, Germany

3. MANA/Nano-Electronics Materials Unit, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

4. Institut für Physik und Chemie, Brandenburgische TU Cottbus, Konrad-Wachsmann-Allee 1, D-03046 Cottbus, Germany

Funder

Bundesministerium fur Wirtschaft und Technologie

Helmholtz Association

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.6b04666

Reference68 articles.

1. Band Bending in Semiconductors: Chemical and Physical Consequences at Surfaces and Interfaces

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3. Surface dipole and Fermi-level position on clean, oxygen-, and water-covered cylindrical Si crystals: A photoelectron spectroscopy study

4. Determination of band bending at the Si(113) surface from photovoltage-induced core-level shifts

5. Surface electrical properties of HF‐treated Si(100)

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