Thermoelectric Properties of Mg2Si Thin Films by Computational Approaches
Author:
Affiliation:
1. Aix-Marseille University and CNRS, MADIREL UMR 7246, Avenue Normandie-Niemen, 13397 Marseille Cedex 20, France
2. Aix-Marseille University and CNRS, IM2NP UMR 7334, Avenue Normandie-Niemen, 13397 Marseille Cedex 20, France
Funder
EADS Foundation
Grand Equipement National de Calcul Intensif
Mésocentre, Aix-Marseille Université
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/jp506323r
Reference45 articles.
1. Thin-film thermoelectric devices with high room-temperature figures of merit
2. Growth mechanism and optical properties of semiconducting Mg2Si thin films
3. SemiconductingMg2Si thin films prepared by molecular-beam epitaxy
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