Etchant Solutions for the Removal of Cu(0) in a Supercritical CO2-Based “Dry” Chemical Mechanical Planarization Process for Device Fabrication-Reference-Cited by-同舟云学术

Etchant Solutions for the Removal of Cu(0) in a Supercritical CO2-Based “Dry” Chemical Mechanical Planarization Process for Device Fabrication

Published:2003-04-01 Issue:17 Volume:125 Page:4980-4981
ISSN:0002-7863
Container-title:Journal of the American Chemical Society
language:en
Short-container-title:J. Am. Chem. Soc.

Author:

Bessel Carol A.¹,Denison Ginger M.¹,DeSimone Joseph M.¹,DeYoung James¹,Gross Stephen¹,Schauer Cynthia K.¹,Visintin Pamela M.¹

Affiliation:

1. Department of Chemistry, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599, Department of Chemical Engineering, North Carolina State University, Raleigh, North Carolina 27695, Department of Chemistry, Villanova University, 800 Lancaster Avenue, Villanova, Pennsylvania 19085, and Micell Technologies, Raleigh, North Carolina 27613

Publisher

American Chemical Society (ACS)

Subject

Colloid and Surface Chemistry,Biochemistry,General Chemistry,Catalysis

Link

https://pubs.acs.org/doi/pdf/10.1021/ja034091m

Reference12 articles.

1. Chemical Mechanical Planarization of Microelectronic Materials

2. Development and Application of an Abrasive-Free Polishing Solution for Copper

3. Chemical-mechanical polishing of copper for interconnect formation

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