Effect of the Oxygen Sub-Stoichiometry and of Hydrogen Insertion on the Formation of Intermediate Bands within the Gap of Disordered Molybdenum Oxide Films-Reference-Cited by-同舟云学术

Effect of the Oxygen Sub-Stoichiometry and of Hydrogen Insertion on the Formation of Intermediate Bands within the Gap of Disordered Molybdenum Oxide Films

Published:2013-08-21 Issue:35 Volume:117 Page:18013-18020
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Kostis Ioannis¹,Vourdas Nicolaos²,Papadimitropoulos Georgios²,Douvas Antonios²,Vasilopoulou Maria²,Boukos Nikolaos²,Davazoglou Dimitris²

Affiliation:

1. Department of Electronics, Technological and Educational Institute of Pireaus, 12244 Aegaleo, Greece

2. NCSR “Demokritos”, Institute of Advanced Materials, Physicochemical Processes, Nano- and Micro-electronics, 153 10 Agia Paraskevi, Attiki, Greece

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp407354j

Reference40 articles.

1. Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels

2. Will we exceed 50% efficiency in photovoltaics?

3. General equivalent circuit for intermediate band devices: Potentials, currents and electroluminescence

4. Multiband GaNAsP quaternary alloys

5. AlGaAs/GaAs photovoltaic cells with an array of InGaAs QDs

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