Hole Injection/Transport Materials Derived from Heck and Sol−Gel Chemistry for Application in Solution-Processed Organic Electronic Devices-Reference-Cited by-同舟云学术

Hole Injection/Transport Materials Derived from Heck and Sol−Gel Chemistry for Application in Solution-Processed Organic Electronic Devices

Published:2010-12-30 Issue:5 Volume:133 Page:1375-1382
ISSN:0002-7863
Container-title:Journal of the American Chemical Society
language:en
Short-container-title:J. Am. Chem. Soc.

Author:

Lim Younhee¹,Park Young-Seo²,Kang Yerang¹,Jang Do Young¹,Kim Joo Hyun³,Kim Jang-Joo²,Sellinger Alan⁴,Yoon Do Y.¹

Affiliation:

1. Department of Chemistry, Seoul National University, Seoul 151-747, Korea

2. Department of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea

3. Department of Polymer Engineering, Pukyong National University, Busan 608-739, Korea

4. Department of Material Science and Engineering and the Center for Advanced Molecular Photovoltaics (CAMP), Stanford University, Stanford, California 94305, United States

Publisher

American Chemical Society (ACS)

Subject

Colloid and Surface Chemistry,Biochemistry,General Chemistry,Catalysis

Link

https://pubs.acs.org/doi/pdf/10.1021/ja1061517

Reference39 articles.

1. Stability of the interface between indium-tin-oxide and poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) in polymer light-emitting diodes

2. Blocking reactions between indium-tin oxide and poly (3,4-ethylene dioxythiophene):poly(styrene sulphonate) with a self-assembly monolayer

3. An investigation into the effect of chemical and thermal treatments on the structural changes of poly(3,4-ethylenedioxythiophene)/polystyrenesulfonate and consequences on its use on indium tin oxide substrates

4. Indium blocking in polymer light emitting diodes with a crosslinked poly(3,4-ethylenedioxythiophene)/silane hole transport layer

5. Electrical degradation of triarylamine-based light-emitting polymer diodes monitored by micro-Raman spectroscopy

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