Hydrogen Elimination Kinetics during Chemical Vapor Deposition of Silica Films-Reference-Cited by-同舟云学术

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Hydrogen Elimination Kinetics during Chemical Vapor Deposition of Silica Films

Published:2002-05-22 Issue:24 Volume:106 Page:6258-6264
ISSN:1520-6106
Container-title:The Journal of Physical Chemistry B
language:en
Short-container-title:J. Phys. Chem. B

Author:

Ojeda F.¹,Abel F.¹,Albella J. M.¹

Affiliation:

1. Departamento de Física e Ingeniería de Superficies, Instituto de Ciencia de Materiales de Madrid (CSIC), Cantoblanco, 28049 Madrid, Spain, and Groupe de Physique des Solides, Universités Paris 7 et Paris 6, 2 Place Jussieu, 75251 Paris Cedex 05, France

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Surfaces, Coatings and Films,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/jp0255381

Reference61 articles.

1. Device-quality SiO2 films on InP and Si obtained by operating the pyrolytic CVD reactor in the retardation regime

2. Low‐temperature chemical vapor deposition of SiO2at 2–10 Torr

3. Highly stable silicon dioxide films deposited by means of rapid thermal low‐pressure chemical vapor deposition onto InP

4. Stoichiometry and possible mechanism of SiH4O2 explosions

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling heterogeneity and memory effects on the kinetic roughening of silica films grown by chemical vapor deposition;Physical Review B;2003-06-27

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