Metal Ions Redox Induced Repeatable Nonvolatile Resistive Switching Memory Behavior in Biomaterials-Reference-Cited by-同舟云学术

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Metal Ions Redox Induced Repeatable Nonvolatile Resistive Switching Memory Behavior in Biomaterials

Published:2018-07-20 Issue:2 Volume:1 Page:496-501
ISSN:2576-6422
Container-title:ACS Applied Bio Materials
language:en
Short-container-title:ACS Appl. Bio Mater.

Author:

Zheng Liang,Sun Bai^ORCID,Mao Shuangsuo,Zhu Shouhui,Zheng Pingping,Zhang Yong,Lei Ming,Zhao Yong

Funder

Ministry of Science and Technology of the People's Republic of China

China Postdoctoral Science Foundation

National Natural Science Foundation of China

Natural Science Foundation of Sichuan Province

Publisher

American Chemical Society (ACS)

Subject

Biochemistry, medical,Biomedical Engineering,General Chemistry,Biomaterials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsabm.8b00226

Reference47 articles.

1. Large-area, flexible imaging arrays constructed by light-charge organic memories

2. Transparent paper: fabrications, properties, and device applications

3. Polymer electronic memories: Materials, devices and mechanisms

4. Investigation of switching mechanism in HfOx-ReRAM under low power and conventional operation modes

5. Resistive switching memory using biomaterials

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