Simulation of Hopping Transport Based on Charge Carrier Localization Times Derived for a Two-Level System-Reference-Cited by-同舟云学术

Simulation of Hopping Transport Based on Charge Carrier Localization Times Derived for a Two-Level System

Published:2010-07-23 Issue:48 Volume:114 Page:20424-20430
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Kocherzhenko Aleksey A.¹,Grozema Ferdinand C.¹,Vyrko Sergey A.¹,Poklonski Nikolai A.¹,Siebbeles Laurens D. A.¹

Affiliation:

1. Opto-Electronic Materials, Department of Chemical Engineering, Delft University of Technology, Julianalaan 126, 2628BL Delft, The Netherlands, and Department of Semiconductor Physics and Nanoelectronics, Physics Faculty, Belarusian State University, Pr. Nezavisimosti 4, 220030 Mink, Belarus

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp104673h

Reference54 articles.

1. Charge Transport in Disordered Organic Photoconductors a Monte Carlo Simulation Study

2. Hopping Conductivity in Disordered Systems

3. Screening of electrostatic fields in crystalline semiconductors by electrons hopping over defects

4. Hopping conductivity in FeSi

5. Variable range hopping conduction and microstructure properties of semiconducting Co-doped TiO2

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