Diameter Dependent Growth Rate and Interfacial Abruptness in Vapor–Liquid–Solid Si/Si1−xGex Heterostructure Nanowires

Author:

Clark Trevor E.1,Nimmatoori Pramod1,Lew Kok-Keong1,Pan Ling1,Redwing Joan M.1,Dickey Elizabeth C.1

Affiliation:

1. Department of Materials Science and Engineering and the Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Reference48 articles.

1. Thermal conductivity of Si/SiGe superlattice nanowires

2. Few-Electron Quantum Dots in Nanowires

3. Benedetti, A.; Norris, D. J.; Hetherington, C. J. D.; Cullis, A. G.; Armigliato, A.; Balboni, R.; Robbins, D. J.; Wallis, D. J.Microscopy of Semiconducting Materials 1999;Institute of Physics Conference Series, Number 164;Institute of Physics Publishing:Philadelphia,1999; pp219−222.

4. Strain and Ge concentration determinations in SiGe/Si multiple quantum wells by transmission electron microscopy methods

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