Coherent Twinning Phenomena: Towards Twinning Superlattices in III−V Semiconducting Nanowires-Reference-Cited by-同舟云学术

Coherent Twinning Phenomena: Towards Twinning Superlattices in III−V Semiconducting Nanowires

Published:2006-11-16 Issue:12 Volume:6 Page:2736-2742
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Xiong Qihua¹,Wang J.¹,Eklund P. C.¹

Affiliation:

1. Department of Physics, Department of Materials Science and Engineering, Material Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl0616983

Reference25 articles.

1. Electronic properties of twin boundaries and twinning superlattices in diamond-type and zinc-blende-type semiconductors

2. Electronic structure of twinning superlattices

3. Direct optical transitions in indirect semiconductors: The case of Ge twinning superlattices

4. Growth of Si twinning superlattice

Cited by 137 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Branched-gallium phosphide nanowires seeded by palladium nanoparticles;Nanotechnology;2023-07-11

2. Deformation twinning in octahedron-based face-centered cubic metallic structures: Localized shear-force dipoles drive atomic displacements;Journal of Materials Science & Technology;2022-11

3. Phonon Transport in GaAs and InAs Twinning Superlattices;J PHYS CHEM C;2022

4. Phonon Transport in GaAs and InAs Twinning Superlattices;The Journal of Physical Chemistry C;2022-09-21

5. Effect of defective structure taking on the electronic and optical properties of InP nanowire;Physica B: Condensed Matter;2022-09