High-Temperature Nucleation of Cubic Silicon Carbide on (0001) Hexagonal-SiC Nominal Surfaces-Reference-Cited by-同舟云学术

High-Temperature Nucleation of Cubic Silicon Carbide on (0001) Hexagonal-SiC Nominal Surfaces

Published:2006-11-16 Issue:12 Volume:6 Page:2788-2794
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Latu-Romain Laurence¹,Chaussende Didier¹,Pons Michel¹

Affiliation:

1. Laboratoire des Matériaux et du Génie Physique (UMR CNRS 5628), INPGrenoble-Minatec, 3 parvis Louis Néel, BP257, 38016 Grenoble cedex 1, France, and Laboratoire de Thermodynamique et Physico-Chimie Métallurgiques (UMR CNRS 5616), INPGrenoble-CNRS, BP 75, 38402 Saint Martin d'Hères, France

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cg060420l

Reference32 articles.

1. Cubic Silicon Carbide (3C-SiC): Structure and Properties of Single Crystals Grown by Thermal Decomposition of Methyl Trichlorosilane in Hydrogen

2. Characterization of defects in 3C-silicon carbide crystals

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